The utilization of the photodiode architecture in conjunction with a thick active region can significantly improve long wavelength infrared type-II InAs/GaSb superlattice photodiodes. By studying the effect of the depletion region placement on the quantum efficiency in a thick structure, we achieved a topside illuminated quantum efficiency of 50% for an -on- diode at at 77 K. Both the double heterostructure design and the application of polyimide passivation greatly reduce the surface leakage, giving an of for a 1% cutoff wavelength of , a Shot–Johnson detectivity of at 77 K, and a background limited operating temperature of 110 K with 300 K background.
Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
Binh-Minh Nguyen, Darin Hoffman, Edward Kwei-wei Huang, Pierre-Yves Delaunay, Manijeh Razeghi; Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K. Appl. Phys. Lett. 22 September 2008; 93 (12): 123502. https://doi.org/10.1063/1.2978330
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