A technique for regrowing layers has been developed to realize nonalloyed Ohmic contacts using plasma assisted molecular beam epitaxy. The contact resistance and device performance were measured of a recessed-gate with the regrowth and of recessed-source/drain high electron mobility transistors (HEMTs). With the regrown layers and recessed drain/source, a low contact resistance of was obtained for contacts to AlGaN. The peak drain current and maximum transconductance of the HEMTs with nonalloyed Ohmic contacts were and , respectively. These results demonstrate that the regrowth of highly doped GaN layers is crucial in achieving low-resistance nonalloyed Ohmic contacts for the HEMT structures.
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