Site-controlled growth of single and pairs of InAs quantum dots is demonstrated on ex situ electron-beam patterned (001) GaAs substrates using in situ Ga-assisted deoxidation prior to overgrowth. 6–8 ML of gallium deposited at a substrate temperature of 460°C in the absence of arsenic followed by a brief anneal under arsenic is used to remove the surface oxide without damaging a pattern consisting of 100nm wide, 20nm deep holes. Single dot luminescence is shown from a dilute array (10μm spacing) of such site-controlled dots, located only 8nm from the regrowth interface.

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