Bandgap engineering in amorphous $BexZnyO$ thin films Available to Purchase

Reactive sputtering was used to grow thin films of $BexZnyO$ on Si (100) substrates. X-ray diffraction patterns of the films revealed no structure, suggesting that the films have an amorphous nature. The optical “bandgap” energy of the amorphous $BexZnyO$ $(a-BexZnyO)$ films was derived from vacuum ultraviolet variable angle spectroscopic ellipsometry measurements. The value of the energy bandgap of the films can be efficiently engineered to vary from the amorphous ZnO bandgap of $3.35to7.91eV$ by changing the Be doping level in the $a-BeZnO$⁠. The $a-BeZnO$ films could be used for fabricating excellent $a-ZnO$ based electronic devices.