Carbon-free silicon dioxide has been deposited at room temperature by injection of pure hexamethyldisiloxane (HMDSO) into an atmospheric pressure microplasma jet from argon. At low HMDSO flow rates [<0.1SCCM (SCCM denotes cubic centimeter per minute at STP)], the SiOxHz films contain no carbon and exhibit an oxygen to silicon ratio close to 2 according to x-ray photoelectron spectroscopy. At high HMDSO flow rates (>0.1SCCM), SiOxCyHz films with a carbon content of up to 21% are obtained. The transition between organic to inorganic film is confirmed by Fourier transformed infrared spectroscopy. The deposition of inorganic films without oxygen admixture is explained by an ion-induced polymerization scheme of HMDSO.

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