Interfacial reactions of Pt-based Schottky contacts on InGaP

Chu, L. H.; Chang, E. Y.; Wu, Y. H.; Huang, J. C.; Chen, Q. Y.; Chu, W. K.; Seo, H. W.; Lee, C. T.

doi:10.1063/1.2834849

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Research Article| February 28 2008

Interfacial reactions of Pt-based Schottky contacts on InGaP

L. H. Chu;

L. H. Chu ^a)

Department of Materials Science and Engineering,

National Chiao-Tung University

, Hsinchu 30050,

Taiwan

, Republic of China

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E. Y. Chang;

E. Y. Chang ^b)

Department of Materials Science and Engineering,

National Chiao-Tung University

, Hsinchu 30050,

Taiwan

, Republic of China

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Y. H. Wu;

Y. H. Wu

Department of Materials Science and Engineering,

National Chiao-Tung University

, Hsinchu 30050,

Taiwan

, Republic of China

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J. C. Huang;

J. C. Huang

Department of Materials Science and Engineering,

National Chiao-Tung University

, Hsinchu 30050,

Taiwan

, Republic of China

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Q. Y. Chen;

Q. Y. Chen ^c)

Department of Physics and Texas Center for Superconductivity,

University of Houston

, Houston, Texas 77204,

USA

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W. K. Chu;

W. K. Chu

Department of Physics and Texas Center for Superconductivity,

University of Houston

, Houston, Texas 77204,

USA

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H. W. Seo;

H. W. Seo

Department of Physics,

University of Arkansas

, Little Rock, Arkansas 72204,

USA

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C. T. Lee

Institute of Microelectronics,

National Cheng-Kung University

, Tainan 70101,

Taiwan

, Republic of China

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Author & Article Information

^a)

NSC GSSAP Research Fellow, also with Texas Center for Superconductivity, University of Houston, Houston, Texas, USA.

^b)

Electronic mail: [email protected].

^c)

Also with Dept of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan.

Appl. Phys. Lett. 92, 082108 (2008)

https://doi.org/10.1063/1.2834849

We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a $7.5 - nm$ -thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at $325 ° C$ for $1 \min$ ⁠, this amorphous layer increased to $12.8 nm$ and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at $325 ° C$ for $10 \min$ ⁠. Prolonging the annealing to $3 h$ led to formation of ${Ga}_{2} Pt$ and $Ga {Pt}_{3}$ phases in InGaP and Schottky diodes degraded after these new phases were observed.

REFERENCES

1.

P.

Fay

,

K.

Stevens

,

J.

Elliot

, and

N.

Pan

,

IEEE Electron Device Lett.

https://doi.org/10.1109/55.798041

20

,

554

(

1999

).

Google Scholar

Crossref

2.

Y. C.

Lin

,

E. Y.

Chang

,

H. M.

Lee

, and

C. Y.

Chang

,

Electron. Lett.

https://doi.org/10.1049/el:20040458

40

,

777

(

2004

).

Google Scholar

Crossref

3.

E.

Nebauer

,

M.

Mai

,

J.

Wurfl

, and

W.

Osterle

,

Semicond. Sci. Technol.

https://doi.org/10.1088/0268-1242/15/8/306

15

,

818

(

2000

).

Google Scholar

Crossref

4.

L. H.

Chu

,

E. Y.

Chang

,

L.

Chang

,

Y. H.

Wu

,

S. H.

Chen

,

H. T.

Hsu

,

T. L.

Lee

,

Y. C.

Lien

, and

C. Y.

Chang

,

IEEE Electron Device Lett.

https://doi.org/10.1109/LED.2006.889238

28

,

82

(

2007

).

Google Scholar

Crossref

5.

J. R.

Lothian

,

F.

Ren

,

J. M.

Kuo

,

J. S.

Weiner

, and

Y. K.

Chen

,

Solid-State Electron.

https://doi.org/10.1016/S0038-1101(96)00251-1

41

,

673

(

1997

).

Google Scholar

Crossref

6.

M. O.

Watanabe

and

Y.

Ohba

,

J. Appl. Phys.

https://doi.org/10.1063/1.337393

60

,

1032

(

1986

).

Google Scholar

Crossref

7.

C. T.

Lee

,

H. P.

Shiao

,

N. T.

Yeh

,

C. D.

Tsai

,

Y. T.

Lyu

, and

Y. K.

Tu

,

Solid-State Electron.

https://doi.org/10.1016/S0038-1101(96)00136-0

41

,

1

(

1997

).

Google Scholar

Crossref

8.

C. T.

Lee

,

M. H.

Lan

, and

C. D.

Tasi

,

Solid-State Electron.

https://doi.org/10.1016/S0038-1101(97)00159-7

41

,

1715

(

1997

).

Google Scholar

Crossref

9.

K.

Shiojima

,

K.

Nishimura

, and

F.

Hyuga

,

J. Vac. Sci. Technol. B

https://doi.org/10.1116/1.589152

14

,

652

(

1996

).

Google Scholar

Crossref

10.

D. S.

Liu

,

C. T.

Lee

, and

C. W.

Wang

,

J. Appl. Phys.

https://doi.org/10.1063/1.1602574

94

,

3805

(

2003

).

Google Scholar

Crossref

11.

D. S.

Liu

and

C. T.

Lee

,

J. Appl. Phys.

https://doi.org/10.1063/1.1428789

91

,

1349

(

2002

).

Google Scholar

Crossref

12.

D. S.

Liu

and

C. T.

Lee

,

J. Appl. Phys.

https://doi.org/10.1063/1.1487439

92

,

987

(

2002

).

Google Scholar

Crossref

13.

P.

Fay

,

K.

Stevens

,

J.

Elliot

, and

N.

Pan

,

IEEE Electron Device Lett.

https://doi.org/10.1109/55.798041

20

,

554

(

1999

).

Google Scholar

Crossref

14.

G.

Stareev

,

H.

Kunzel

, and

G.

Dortmann

,

J. Appl. Phys.

https://doi.org/10.1063/1.355002

74

,

7344

(

1993

).

Google Scholar

Crossref

15.

C.

Fontaine

,

T.

Okumura

, and

K. N.

Tu

,

J. Appl. Phys.

https://doi.org/10.1063/1.332165

54

,

1404

(

1983

).

Google Scholar

Crossref

16.

S.

Kim

,

I.

Adesida

, and

H.

Hwang

,

Appl. Phys. Lett.

https://doi.org/10.1063/1.2137687

87

,

232102

(

2005

).

Google Scholar

Crossref

2008

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