High performance polythiophene thin-film transistors doped with very small amounts of an electron acceptor Available to Purchase

The relationship between the electrical properties and the microstructure of poly(3-hexylthiophene) (P3HT) films doped with an electron acceptor, 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane $(F4-TCNQ)$ has been studied. The introduction of $F4-TCNQ$ in very small quantities improved the device performance of P3HT thin-film transistors significantly. The field-effect mobility of a device doped with only $0.2wt%$ $F4-TCNQ$ was enhanced by a factor of 30 with respect to that of a pure P3HT device. The threshold voltages of the P3HT thin-film transistors can also be controlled by adjusting the $F4-TCNQ$ concentration. These improvements are attributed to the doping-induced formation of charge-transfer complexes and improved molecular orientation of the P3HT.