Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the pinholes induces the formation of nanocraters, found to be the key for the nucleation of the nanowires. With thicknesses up to , nanocraters reach the underlying substrate, resulting into a preferential growth orientation of the nanowires. Possibly related to the formation of nanocraters, we observe an incubation period of before the nanowires growth is initiated.
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
A. Fontcuberta i Morral, C. Colombo, G. Abstreiter, J. Arbiol, J. R. Morante; Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires. Appl. Phys. Lett. 11 February 2008; 92 (6): 063112. https://doi.org/10.1063/1.2837191
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