Direct measurement of the electron velocity at an extreme electric field is problematic due to impact ionization. The dependence obtained by a Monte Carlo method can be verified, however, by comparing simulated and experimental data on superfast switching in a GaAs bipolar transistor structure, in which the switching transient is very sensitive to this dependence at high electric fields (up to ). Such a comparison allows the conclusion to be made that the change from negative to positive differential mobility predicted earlier at should not happen until the electric field exceeds .
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