A solution based approach to forming Ohmic contacts to p-type GaN is described. Electroless plated NiAu contacts are shown to compare favorably with traditional evaporated contacts, with contact resistivities ρc in the region of 102Ωcm2. These values are readily achieved after a rapid thermal annealing in an O2 atmosphere. The tunneling nature of the contact is confirmed via temperature dependant measurements. X-ray diffraction measurements confirm the similarity between evaporated and plated contacts. Current-photocurrent (I-L) and current-voltage (I-V) measurements from light emitting diodes formed using an electroless p-type contact are shown. Electroless deposition of the contact metals allows for a reduction in processing time and cost.

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