Deep-ultraviolet (DUV) solar-blind photodetectors based on high-quality cubic boron nitride films with a metal/semiconductor/metal configuration were fabricated. The design of interdigitated circular electrodes enables high homogeneity of electric field between pads. The DUV photodetectors present a peak responsivity at with a very sharp cutoff wavelength at and a visible rejection ratio (180 versus ) of more than four orders of magnitude. The characteristics of the photodetectors present extremely low dark current, high breakdown voltage, and high responsivity, suggesting that films are very promising for DUV sensing.
deep-ultraviolet solar-blind cubic boron nitride based photodetectors
A. Soltani, H. A. Barkad, M. Mattalah, B. Benbakhti, J.-C. De Jaeger, Y. M. Chong, Y. S. Zou, W. J. Zhang, S. T. Lee, A. BenMoussa, B. Giordanengo, J.-F. Hochedez; deep-ultraviolet solar-blind cubic boron nitride based photodetectors. Appl. Phys. Lett. 4 February 2008; 92 (5): 053501. https://doi.org/10.1063/1.2840178
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