The band structure of the heterojunction was investigated by x-ray photoelectron spectroscopy and was found to be very sensitive to variations of oxygen content in the oxide film. A decrease of the valence band offset (VBO) has been observed after in situ postdeposition annealing (PDA). The VBO value obtained after PDA is in excellent agreement with data reported in the literature. The extra oxygen, supplied during PDA, is stably incorporated in the matrix. Moreover, this extra oxygen limits moisture adsorption during air exposure and helps to stabilize the electronic configuration of the heterojunction.
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