The potential of GaN based materials for x-ray detection is investigated. The absorption coefficient in GaN is measured as a function of photon energy between 6 and . Metal-semiconductor-metal photodetectors are fabricated and characterized. The response dependence on bias, the temporal dynamics, and the response dependence on detector geometry all together point toward a mixing of photovoltaic and photoconductive effects. Thanks to a large photoconductive gain, the detector has a decent responsivity at the expense of a large response time.
GaN for x-ray detection
Jean-Yves Duboz, Marguerite Laügt, David Schenk, Bernard Beaumont, Jean-Luc Reverchon, Andreas D. Wieck, Tino Zimmerling; GaN for x-ray detection. Appl. Phys. Lett. 30 June 2008; 92 (26): 263501. https://doi.org/10.1063/1.2951619
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