High doping regimes of B implanted Ge have been accurately characterized combining Hall effect technique and nuclear reaction analysis. Preamorphized Ge was implanted with B at (spanning the concentration range) and recrystallized by solid phase epitaxy at . The Hall scattering factor and the maximum concentration of active B resulted and , respectively. The room-temperature carrier mobility was accurately measured, decreasing from in the investigated dopant density, and a fitting empirical law is given. These results allow reliable evaluation for Ge application in future microelectronic devices.
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