Power transistor applications require alternative gate dielectrics on SiC that can operate at high fields without breaking down, as well as provide a high quality interface in order to minimize mobility degradation due to interface roughness. We have grown epitaxial MgO (111) crystalline layers on (0001) substrates and characterized their structural and electrical properties. Measurements of gate leakage, breakdown fields, and dielectric properties make epitaxial MgO a potential candidate gate dielectric for SiC-based transistors.
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