It is shown that Mg deposition at room temperature on a GaN(0001) surface, obtained in situ by molecular beam epitaxy, gives rise to a layer-by-layer epitaxial growth mode. The study by reflection high-energy electron diffraction and scanning tunneling microscopy clearly evidences that a two-dimensional nucleation growth mechanism occurs from the very first Mg monolayer deposited. A complete covering of the GaN surface is obtained from the deposition of the first two monolayers of Mg.
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Research Article| June 12 2008
Layer-by-layer epitaxial growth of Mg on GaN(0001)
S. Pezzagna, S. Vézian, J. Brault, J. Massies; Layer-by-layer epitaxial growth of Mg on GaN(0001). Appl. Phys. Lett. 9 June 2008; 92 (23): 233111. https://doi.org/10.1063/1.2943323
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