We have demonstrated spin injection from a full Heusler alloy thin film into a (100) InGaAs quantum well in a semiconductor light-emitting diode structure at a temperature of . The detection is performed in the oblique Hanle geometry, allowing quantification of the effective spin lifetime and spin detection efficiency . This work builds on existing studies on off-stoichiometric Heusler injectors into similar light-emitting-diode structures. The role of injector stoichiometry can therefore be quantitatively assessed with the result that the spin injection efficiency increases by a factor of approximately 2 as compared with an off-stoichiometric injector.
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