The possibility of inducing indirect-to-direct band gap transition in silicon nanowires (SiNWs) by changing wire diameter is well known. Here, we show that for ⟨112⟩-oriented SiNWs indirect-to-direct band gap transition can be tuned simply by changing the wire cross-section shape or the cross-sectional aspect ratio of the (111) and (110) facets that enclose the wire, instead of changing the wire diameter. The cross-sectional aspect ratio must be smaller than 0.5 in order to maintain a direct band gap, indicating the important role of the (110) facet.
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