Comparative study of electroabsorption in $InGaN∕GaN$ quantum zigzag heterostructures with polarization-induced electric fields

We present a comparative study on $InGaN∕GaN$ quantum zigzag structures embedded in $p-i-n$ diode architecture that exhibit blue-shifting electroabsorption in the blue when an electric field is externally applied to compensate for the polarization-induced electric field across the wells. With the polarization breaking their symmetry, the same $InGaN∕GaN$ quantum structures redshift their absorption edge when the external field is applied in the same direction as the well polarization. Both computationally and experimentally, we investigate the effects of polarization on electroabsorption by varying compositional content and structural parameters and demonstrate that electroabsorption grows stronger with weaker polarization in these multiple quantum well modulators.