Cluster related defects were investigated by the thermally stimulated current (TSC) method in neutron irradiated -type Si diodes during annealing. Three hole traps labeled , , and proved to have an electric-field-enhanced emission characteristic of Coulombic wells. Their zero field emission rates were deduced describing the TSC peaks with the three-dimensional Poole-Frenkel formalism when accounting for the electric field distribution. As acceptors in the lower half of the gap, these centers have a direct impact on the effective doping of the -type diodes. They are revealed as causing the long term annealing effects.
Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes
I. Pintilie, E. Fretwurst, G. Lindström; Cluster related hole traps with enhanced-field-emission—the source for long term annealing in hadron irradiated Si diodes. Appl. Phys. Lett. 14 January 2008; 92 (2): 024101. https://doi.org/10.1063/1.2832646
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