Cluster related defects were investigated by the thermally stimulated current (TSC) method in neutron irradiated n-type Si diodes during 80°C annealing. Three hole traps labeled H(116K), H(140K), and H(152K) proved to have an electric-field-enhanced emission characteristic of Coulombic wells. Their zero field emission rates were deduced describing the TSC peaks with the three-dimensional Poole-Frenkel formalism when accounting for the electric field distribution. As acceptors in the lower half of the gap, these centers have a direct impact on the effective doping of the n-type diodes. They are revealed as causing the long term annealing effects.

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