Photorefractive beam self-trapping is investigated in InP:Fe and is shown to occur within tens of microseconds after beam switch on. This fast response time is predicted by an analytical theoretical interpretation based on a simple photorefraction model which suggests buildups in a time range consistent with experiments.
Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths
Delphine Wolfersberger, Naïma Khelfaoui, Cristian Dan, Nicolas Fressengeas, Hervé Leblond; Fast photorefractive self-focusing in InP:Fe semiconductor at infrared wavelengths. Appl. Phys. Lett. 14 January 2008; 92 (2): 021106. https://doi.org/10.1063/1.2830989
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