Effect of molecular beam epitaxy growth conditions on the Bi content of $GaAs1−xBix$

We describe how the Bi content of $GaAs1−xBix$ epilayers grown on GaAs can be controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth conditions are required because of the strong tendency for Bi to surface segregate under usual growth conditions for GaAs. A maximum Bi content of 10% is achieved at low substrate temperature and low arsenic pressure, as inferred from x-ray diffraction measurements. A model for bismuth incorporation is proposed that fits a large body of experimental data on Bi content for a wide range of growth conditions. Low growth rates are found to facilitate the growth of bismide alloys with a low density of Bi droplets.