Nanoscale three dimensional pattern formation in light emitting porous silicon

A simple and efficient method for generating light emitting three-dimensional (3D) nanoscale pattern in silicon is presented. The method is based on differential chemical etching on and in-between patterned metal features. Effective transfer of various two-dimensional nanoscale $(10–100nm)$ metal patterns on bulk silicon to 3D porous silicon network is demonstrated. The capability and limitations of this method are discussed.