Atomic H exposure of a GaAs surface at 390°C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situ reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this procedure applied to In0.2Ga0.8As effectively removes the native oxides resulting in an atomically clean surface. However, the bulk InGaAs stoichiometry is not preserved from this treatment. The In:Ga ratio from the substrate is found to decrease by 33%. The implications for high-mobility channel applications are discussed as the carrier mobility increases nearly linearly with the In content.

1.
For example, see,
Y.
Xuan
,
P. D.
Ye
, and
T.
Shen
,
Appl. Phys. Lett.
91
,
232107
(
2007
).
2.
C. W.
Wilmsen
,
Physics and Chemistry of III-V Compound Semiconductor Interfaces
, edited by
C. W.
Wilmsen
(
Plenum
,
New York
,
1985
), pp.
428
438
.
3.
W. M.
Lau
,
R. N. S.
Sodhi
,
S.
Jin
,
S.
Ingrey
,
N.
Puetz
, and
A.
Spring Thorpe
,
J. Appl. Phys.
67
,
768
(
1990
).
4.
L. J.
Brillson
,
M. L.
Slade
,
R. E.
Viturro
,
M. K.
Kelly
,
N.
Tache
,
G.
Margaritondo
,
J. M.
Woodall
,
P. D.
Kirchner
,
G. D.
Pettit
, and
S. L.
Wright
,
Appl. Phys. Lett.
48
,
1458
(
1986
).
5.
S. I. J.
Ingrey
,
W. M.
Lau
, and
R. N. S.
Sodhi
,
J. Vac. Sci. Technol. A
7
,
1554
(
1989
).
6.
Properties of Lattice-Matched and Strained Indium Gallium Arsenide
, edited by
P.
Bhattacharya
(
Inspec
,
London
,
1993
).
7.
M.
Jaffe
and
J.
Singh
,
J. Appl. Phys.
65
,
329
(
1989
).
8.

The InGaAsGaAs epitaxial structure was grown by Intelliepi.

9.

Thermal cracking source manufactured by MBE Components.

10.
E.
Garfunkel
,
T.
Gustafsson
,
P.
Lysaght
,
S.
Stemmer
, and
R.
Wallace
,
Future Fab International
21
,
126
(
2006
).
11.
F. S.
Aguirre-Tostado
,
D.
Layton
,
A.
Herrera-Gomez
,
R. M.
Wallace
,
J.
Zhu
,
G.
Larrieu
,
E.
Maldonado
,
W. P.
Kirk
, and
M.
Tao
,
J. Appl. Phys.
102
,
084901
(
2007
).
12.
S.
Sugata
,
A.
Takamori
,
N.
Takado
,
K.
Asakawa
,
E.
Miyauchi
, and
H.
Hashimoto
,
J. Vac. Sci. Technol. B
6
,
1087
(
1988
).
13.
A.
Khatiri
,
J. M.
Ripalda
,
T. J.
Krzyzewski
,
G. R.
Bell
,
C. F.
McConville
, and
T. S.
Jones
,
Surf. Sci.
548
,
L1
(
2004
).
14.
C. L.
Hinkle
,
A. M.
Sonnet
,
E. M.
Vogel
,
S.
McDonnell
,
G. J.
Hughes
,
M.
Milojevic
,
B.
Lee
,
F. S.
Aguirre-Tostado
,
K. J.
Choi
,
J.
Kim
, and
R. M.
Wallace
,
Appl. Phys. Lett.
91
,
163512
(
2007
).
15.
Omicron Nanotechnology, (see http://www.omicron.de).
16.

AANALYZER is a software for XPS peak deconvolution.

17.
G. P.
Schwartz
,
J. E.
Griffiths
, and
G. J.
Gualtieri
,
Thin Solid Films
94
,
213
(
1982
).
18.

See, for example, Section 5.4 of Ref. 2 by C. M. Wilmsen.

19.
M.
Yamada
,
Y.
Ide
, and
K.
Tone
,
Jpn. J. Appl. Phys., Part 2
31
,
L1157
(
1992
).
20.
M.
Yamada
,
Jpn. J. Appl. Phys., Part 2
35
,
L651
(
1996
).
21.
J. A.
Schaefer
,
Appl. Phys. A: Solids Surf.
51
,
305
(
1990
).
22.
K. R.
Evans
,
R.
Kaspi
,
J. E.
Ehret
,
M.
Skowronski
, and
C. R.
Jones
,
J. Vac. Sci. Technol. B
13
,
1820
(
1995
).
23.
J. A.
Schaefer
,
D. J.
Frankel
, and
G. J.
Lapeyre
,
Z. Phys. B: Condens. Matter
79
,
259
(
1990
).
24.
W.
Braun
,
Applied RHEED: Reflection High-Energy Electron Diffraction During Crystal Growth
(
Springer
,
Germany
,
1999
).
25.
P. A.
Bone
,
J. M.
Ripalda
,
G. R.
Bell
, and
T. S.
Jones
,
Surf. Sci.
600
,
973
(
2006
).
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