Very low sheet resistance two-dimensional electron gases have been obtained at ultrathin heterojunctions. By investigating the molecular beam epitaxy growth conditions, the interface roughness at the heterojunction has been reduced, leading to high room-temperature electron mobilities and high electron sheet densities due to spontaneous and piezoelectric polarization depending on the AlN thickness. This combination led to a large reduction of the room-temperature sheet resistance of , a new record. The improved transport properties have made it possible to observe Shubnikov–de-Haas oscillations of the magnetoresistance of the two-dimensional electron gas at ultrathin binary heterojunctions for the first time. The results are indicative of the vast potential of high-quality structures for a variety of device applications.
Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary heterojunctions
Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing, Debdeep Jena; Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary heterojunctions. Appl. Phys. Lett. 14 April 2008; 92 (15): 152112. https://doi.org/10.1063/1.2911748
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