Very low sheet resistance two-dimensional electron gases have been obtained at ultrathin heterojunctions. By investigating the molecular beam epitaxy growth conditions, the interface roughness at the heterojunction has been reduced, leading to high room-temperature electron mobilities and high electron sheet densities due to spontaneous and piezoelectric polarization depending on the AlN thickness. This combination led to a large reduction of the room-temperature sheet resistance of , a new record. The improved transport properties have made it possible to observe Shubnikov–de-Haas oscillations of the magnetoresistance of the two-dimensional electron gas at ultrathin binary heterojunctions for the first time. The results are indicative of the vast potential of high-quality structures for a variety of device applications.
Skip Nav Destination
,
,
,
,
Article navigation
14 April 2008
Research Article|
April 17 2008
Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary heterojunctions
Yu Cao;
Yu Cao
a)
Department of Electrical Engineering,
University of Notre Dame
, Indiana 46556, USA
Search for other works by this author on:
Kejia Wang;
Kejia Wang
Department of Electrical Engineering,
University of Notre Dame
, Indiana 46556, USA
Search for other works by this author on:
Alexei Orlov;
Alexei Orlov
Department of Electrical Engineering,
University of Notre Dame
, Indiana 46556, USA
Search for other works by this author on:
Huili Xing;
Huili Xing
Department of Electrical Engineering,
University of Notre Dame
, Indiana 46556, USA
Search for other works by this author on:
Debdeep Jena
Debdeep Jena
Department of Electrical Engineering,
University of Notre Dame
, Indiana 46556, USA
Search for other works by this author on:
Yu Cao
a)
Kejia Wang
Alexei Orlov
Huili Xing
Debdeep Jena
Department of Electrical Engineering,
University of Notre Dame
, Indiana 46556, USA
a)
Electronic mail: [email protected].
Appl. Phys. Lett. 92, 152112 (2008)
Article history
Received:
December 31 2007
Accepted:
March 28 2008
Citation
Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing, Debdeep Jena; Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary heterojunctions. Appl. Phys. Lett. 14 April 2008; 92 (15): 152112. https://doi.org/10.1063/1.2911748
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Charge localization in optoelectronic and photocatalytic applications: Computational perspective
Francesco Ambrosio, Julia Wiktor
Diamagnetic levitation of water realized with a simple device consisting of ordinary permanent magnets
Tomoya Naito, Tomoaki Suzuki, et al.
Related Content
Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures
J. Appl. Phys. (April 2015)
Comprehensive magnetotransport characterization of two dimensional electron gas in AlGaN/GaN high electron mobility transistor structures leading to the assessment of interface roughness
AIP Advances (September 2014)
Transport in strain relaxed In0.15Al0.85As/In0.17Ga0.83As heterojunctions
J. Vac. Sci. Technol. A (July 1993)
High-mobility window for two-dimensional electron gases at ultrathin Al N ∕ Ga N heterojunctions
Appl. Phys. Lett. (May 2007)
Radiation-induced decay of Shubnikov–de Haas oscillations in the regime of the radiation-induced zero-resistance states
Appl. Phys. Lett. (September 2007)