InAs is very attractive as a channel material for high-speed metal-oxide-semiconductor (MOS) field-effect transistors due to its very high electron mobility and saturation velocity. We investigated the processing conditions and the interface properties of an InAs metal-oxide-semiconductor structure with dielectric deposited by atomic-layer deposition. The MOS capacitor and characteristics were studied and discussed. Simple field-effect transistors fabricated on an InAs bulk material without source/drain implantation were measured and analyzed.
Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Dielectric
Ning Li, Eric S. Harmon, James Hyland, David B. Salzman, T. P. Ma, Yi Xuan, P. D. Ye; Properties of InAs metal-oxide-semiconductor structures with atomic-layer-deposited Dielectric. Appl. Phys. Lett. 7 April 2008; 92 (14): 143507. https://doi.org/10.1063/1.2908926
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