The electrical, optical, and phase change properties of bismuth doped Sb8Te2 films have been characterized. Thin films of the material, with up to 15at.% percent Bi, have been synthesized; amorphous films were stable at room temperature with a Bi concentration of up to 13at.%. The effect of Bi on the phase change properties of the film is shown to reduce the crystallization time by an order of magnitude while the crystallization activation energy reduction is minimal; 0.2eV. Bismuth doped Sb8Te2 materials show potential as the active material in phase change data storage media.

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