The site occupancy of Ca in the solid solution has been investigated through an analysis of the lattice parameters and ferroelectric phase transition temperature variation. The lattice volume was found to vary in a nonlinear manner with different amounts of ions occupying the Ba and Ti sites near the pure end member. To model the lattice volume trends in this complex case, we modify the classical Vegard’s law and incorporate a lattice volume correction to account for the ionic compensation of the acceptor charge , with oxygen vacancies . The paraelectric-ferroelectric phase transition temperature shows further evidence of a non-linear variation with composition. This is also consistent with site occupancy changes. From lattice volume and phase transition temperature variations on the Ba-site occupancy compositions, the maximum concentration of Ti-site occupancy was determined and found to be approximately and then found to remain constant for higher concentrations of Ca, specifically .
Skip Nav Destination
Article navigation
17 March 2008
Research Article|
March 17 2008
A modified Vegard’s law for multisite occupancy of Ca in solid solutions
Soonil Lee;
Soonil Lee
a)
Center for Dielectric Studies, Materials Research Institute,
The Pennsylvania State University
, University Park, Pennsylvania 16802, USA
Search for other works by this author on:
Clive A. Randall
Clive A. Randall
Center for Dielectric Studies, Materials Research Institute,
The Pennsylvania State University
, University Park, Pennsylvania 16802, USA
Search for other works by this author on:
a)
Electronic mail: [email protected].
Appl. Phys. Lett. 92, 111904 (2008)
Article history
Received:
January 11 2008
Accepted:
January 25 2008
Citation
Soonil Lee, Clive A. Randall; A modified Vegard’s law for multisite occupancy of Ca in solid solutions. Appl. Phys. Lett. 17 March 2008; 92 (11): 111904. https://doi.org/10.1063/1.2857475
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
Roadmap on photonic metasurfaces
Sebastian A. Schulz, Rupert. F. Oulton, et al.
Superconducting flip-chip devices using indium microspheres on Au-passivated Nb or NbN as under-bump metallization layer
Achintya Paradkar, Paul Nicaise, et al.
Sputter epitaxy of ScAlN films on GaN high electron mobility transistor structures
Tomoya Okuda, Shunsuke Ota, et al.
Related Content
Determination of Mg composition in Mg x Zn 1 − x O alloy: Validity of Vegard’s law
J. Vac. Sci. Technol. B (September 2005)
Deviations from Vegard’s rule in Al 1 − x In x N (0001) alloy thin films grown by magnetron sputter epitaxy
J. Appl. Phys. (February 2007)
Effect of lattice occupation behavior of Li+ cations on microstructure and electrical properties of (Bi1/2Na1/2)TiO3-based lead-free piezoceramics
J. Appl. Phys. (March 2011)
Lattice parameters, deviations from Vegard’s rule, and E 2 phonons in InAlN
Appl. Phys. Lett. (December 2008)
Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation
J. Appl. Phys. (August 2011)