High-indium-content InGaAs metal-oxide-semiconductor capacitor with amorphous $LaAlO3$ gate dielectric

The structure and electrical properties of $LaAlO3∕n-In0.53Ga0.47As$ metal-oxide-semiconductor capacitors deposited by molecular-beam epitaxy were investigated. Transmission electron microscopy revealed a sharp interface between the dielectric and InGaAs. Postdeposition annealing at $440–500°C$ significantly reduced the capacitive equivalent thickness and frequency dispersion. A hysteresis of $15mV–0.1V$⁠, a dielectric permittivity of $17±1$⁠, and a dielectric strength of $∼4.3MV∕cm$ were measured. Additionally, a high loss in the parallel conductance and gate-bias independence in the inversion region was observed, implying the fast generation rate of minority carriers in $In0.53Ga0.47As$⁠.