Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and . Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.
REFERENCES
1.
Mid-Infrared Semiconductor Optoelectronics
, edited by A.
Krier
(Springer
, London
, 2006
), part IV (Applications), pp. 595
–730
.2.
V. A.
Mishournyi
, F.
de Anda
, A. Y.
Gorbachev
, and V. I.
Vasil’ev
, J. Electron. Mater.
28
, 959
(1999
).3.
V. I.
Vasil"ev
, I. P.
Nikitina
, V. M.
Smirnov
, and D. N.
Tretyakov
, Mater. Sci. Eng., B
B66
, 67
(1999
).4.
M.
Aidaraliev
, G. G.
Zegrya
, N. V.
Zotova
, S. A.
Karandashev
, B. A.
Matveev
, N. M.
Stus
, and G. N.
Talalakin
, Semiconductors
26
, 138
(1992
).5.
M.
Grau
, C.
Lin
, O.
Dier
, C.
Lauer
, and M.-C.
Amann
, Appl. Phys. Lett.
87
, 241104
(2005
).6.
P.
Varshni
, Physica (Amsterdam)
34
, 149
(1967
).7.
I. T.
Yamamoto
, K.
Sakai
, and S.
Akiba
, IEEE J. Quantum Electron.
15
, 684
(1979
).8.
K.
Shim
, and H.
Rabitz
, J. Appl. Phys.
85
, 7705
(1999
).9.
10.
D. O.
Toginho Filho
, I. F. L.
Dias
, E.
Laureto
, J. L.
Duarte
, S. A.
Laurenco
, L. C.
Pocas
, S. S.
Prabhu
, and J.
Klem
, J. Appl. Phys.
97
, 123702
(2005
).11.
K. D.
Moiseev
and A.
Krier
, J. Appl. Phys.
90
, 3988
(2001
).12.
T.
Yamamoto
, M.
Kasu
, S.
Noda
, and A.
Sasaki
, J. Appl. Phys.
68
, 5318
(1990
).13.
T. H.
Chiu
, W. T.
Tsang
, S. N. G.
Chu
, J.
Shah
, and J. A.
Ditzenberger
, Appl. Phys. Lett.
46
, 408
(1985
).14.
A.
Krier
, V. M.
Smirnov
, P. J.
Batty
, V. I.
Vasil’ev
, G. S.
Gagis
, and V. I.
Kuchinskii
, Appl. Phys. Lett.
90
, 1115
(2007
).© 2007 American Institute of Physics.
2007
American Institute of Physics
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