The authors report the calculation of the minority carrier distribution in the base region of the transistor laser (TL) employing the relevant continuity equations and experimental carrier lifetimes, spontaneous and stimulated, extracted from the transistor characteristics. A charge control model of the TL is developed, consistent with the short recombination lifetime of the quantum-well base (which competes with the short emitter-to-collector transit time). The absence of carrier-photon resonance of a TL is demonstrated with the bandwidth estimated to be for a long laser cavity length and for a cavity.
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Research Article| July 30 2007
Charge control analysis of transistor laser operation
N. Holonyak, Jr.;
H. W. Then;
M. Feng, N. Holonyak, H. W. Then, G. Walter; Charge control analysis of transistor laser operation. Appl. Phys. Lett. 30 July 2007; 91 (5): 053501. https://doi.org/10.1063/1.2767172
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