Position control of solid-phase crystallization in the amorphous (: 0–1) films on insulating substrates was investigated by using Ni-imprint technique. Crystal nucleation at the imprinted positions proceeded approximately 2–20 times, depending on Ge fraction, faster than the conventional solid-phase crystallization, which was due to the catalytic effect of Ni. As a result, large SiGe crystal regions were obtained at controlled positions. On the other hand, the growth velocity did not changed, which suggested that grown regions contained few residual Ni atoms.
REFERENCES
1.
M.
Miyao
, T.
Sadoh
, S.
Yamaguchi
, and S. K.
Park
, Tech. Rep. IEICE. SDM
101
, 1
(2001
).2.
S.
Yamaguchi
, N.
Sugii
, S. K.
Park
, K.
Nakagawa
, and M.
Miyao
, J. Appl. Phys.
89
, 2091
(2001
).3.
J.
Olivares
, A.
Rodriguez
, J.
Sangrador
, T.
Rodriguez
, C.
Ballesteros
, and A.
Kling
, Thin Solid Films
337
, 51
(1999
).4.
M.
Miyao
, I.
Tsunoda
, T.
Sadoh
, and A.
Miyauchi
, J. Appl. Phys.
97
, 054909
(2005
).5.
C.
Hayzelden
and J. L.
Bastone
, J. Appl. Phys.
73
, 8279
(1993
).6.
H.
Kanno
, A.
Kenjo
, T.
Sadoh
, and M.
Miyao
, Appl. Phys. Lett.
85
, 899
(2004
).7.
H.
Kanno
, A.
Kenjo
, T.
Sadoh
, and M.
Miyao
, Jpn. J. Appl. Phys., Part 1
45
, 4351
(2006
).8.
H.
Kanno
, I.
Tsunoda
, A.
Kenjo
, T.
Sadoh
, and M.
Miyao
, Appl. Phys. Lett.
82
, 2148
(2003
).9.
H.
Kanno
, K.
Toko
, T.
Sadoh
, and M.
Miyao
, Appl. Phys. Lett.
89
, 182120
(2006
).10.
K.
Makihira
and T.
Asano
, Appl. Phys. Lett.
76
, 3774
(2000
).11.
L.
Csepregi
, E. F.
Kennedy
, J. W.
Mayer
, and T. W.
Sigmon
, J. Appl. Phys.
49
, 3906
(1978
).12.
L.
Csepregi
, R. P.
Kullen
, J. W.
Mayer
, and T. W.
Sigmon
, Solid State Commun.
21
, 1019
(1977
).13.
M.
Bauer
, M.
Oehme
, M.
Sauter
, G.
Eifler
, and E.
Kasper
, Thin Solid Films
364
, 228
(2000
).© 2007 American Institute of Physics.
2007
American Institute of Physics
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