A maskless process for the directed assembly of Ni contacts to Si nanowires on prepatterned electrodes is reported. Microarrays of thin AuCr electrodes were lithographically formed on oxidized Si substrates followed by electric-field assisted alignment of Si nanowires between the electrodes. The nanowire ends were then embedded in Ni by selective electrodeposition over the prepatterned electrodes. Annealing to 300°C provided good electrical contacts for transport through the doped nanowires. This approach provides a parallel, maskless method to establish metal contacts to the nanowires without the need of high resolution electron beam lithography for electrical and mechanical applications.

1.
C.
Fasth
,
A.
Fuhrer
,
M. T.
Bjork
, and
L.
Samuelson
,
Nano Lett.
5
,
1487
(
2005
).
2.
E. D.
Minot
,
F.
Kelkensberg
,
M.
van Kouwen
,
J. A.
van Dam
,
L. P.
Kouwenhoven
,
J.
Zwiller
,
M. T.
Borgstrom
,
O.
Wunnicke
,
M. A.
Verhijen
, and
E. P. A. M.
Bakkers
,
Nano Lett.
7
,
367
(
2007
).
3.
Y.
Huang
and
C. M.
Lieber
,
Pure Appl. Chem.
76
,
2051
(
2004
).
4.
M. S.
Islam
,
S.
Sharma
,
T. I.
Kamins
, and
R. S.
Williams
,
Nanotechnology
15
,
L5
(
2004
).
5.
J.
Goldberger
,
A. I.
Hochbaum
,
R.
Fan
, and
P.
Yang
,
Nano Lett.
6
,
973
(
2006
).
6.
V.
Schmidt
,
H.
Riel
,
S.
Senz
,
S.
Karg
,
W.
Riess
, and
U.
Gösele
,
Small
2
,
85
(
2006
).
7.
P. A.
Smith
,
C. D.
Nordquist
,
T. N.
Jackson
,
T. S.
Mayer
,
B. R.
Martin
,
J.
Mbindyo
, and
T. E.
Mallouk
,
Appl. Phys. Lett.
77
,
1399
(
2000
).
8.
Y.
Huang
,
X.
Duan
,
Q.
Wei
, and
C. M.
Lieber
,
Science
291
,
630
(
2001
).
9.
D.
Whang
,
S.
Jin
,
Y.
Wu
, and
C. M.
Lieber
,
Nano Lett.
3
,
1255
(
2003
).
10.
S.
Evoy
,
N.
DiLello
,
V.
Deshpande
,
A.
Narayanan
,
H.
Liu
,
M.
Reigelman
,
B. R.
Martin
,
B.
Hailer
,
J.-C.
Bradely
,
W.
Weiss
,
T. S.
Mayer
,
Y.
Gogotsi
,
H. H.
Bau
,
T. E.
Mallouk
, and
S.
Raman
,
Microelectron. Eng.
75
,
31
(
2004
).
11.
S.
Jin
,
D.
Whang
,
M. C.
McAlpine
,
R. S.
Friedman
,
Y.
Wu
, and
C. M.
Lieber
,
Nano Lett.
4
,
915
(
2004
).
12.
M.
Liebau
,
E.
Unger
,
G. S.
Duesberg
,
A. P.
Graham
,
R.
Seidel
,
F.
Kreupl
, and
W.
Hoenlein
,
Appl. Phys. A: Mater. Sci. Process.
77
,
731
(
2003
).
13.
P.
Aella
,
S.
Ingole
,
W. T.
Petuskey
, and
S. T.
Picraux
,
Adv. Mater. (Weinheim, Ger.)
(in press).
14.
J.
Foggiato
and
W. S.
Yoo
,
IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
(IEEE, New York,
2005
), pp.
205
206
.
15.
Y.
Tsuchiya
,
A.
Tobioka
,
O.
Nakatsuka
,
H.
Ikeda
,
A.
Sakai
,
S.
Zaima
, and
Y.
Yasuda
,
Jpn. J. Appl. Phys., Part 1
41
,
2450
(
2002
).
16.
L. D. V.
Llona
,
H. V.
Jansen
, and
M. C.
Elwenspoek
,
J. Micromech. Microeng.
16
,
S1
(
2006
).
17.
W. M.
Weber
,
L.
Geelhaar
,
A. P.
Graham
,
E.
Unger
,
G. S.
Duesberg
,
M.
Liebau
,
W.
Pamler
,
C.
Chèze
,
H.
Riechert
,
P.
Lugli
, and
F.
Kreupl
,
Nano Lett.
6
,
2660
(
2006
).
You do not currently have access to this content.