The authors present the demonstration of nanowire field-effect transistors incorporating group IV alloy nanowires, Si1xGex. Single-crystalline Si1xGex alloy nanowires were grown by a Au catalyst-assisted chemical vapor synthesis using SiH4 and GeH4 precursors, and the alloy composition was reproducibly controlled in the whole composition range by controlling the kinetics of catalytic decomposition of precursors. Complementary in situ doping of Si1xGex nanowires was achieved by PH3 and B2H6 incorporation during the synthesis for n- and p-type field-effect transistors. The availability of both n- and p-type Si1xGex nanowire circuit components suggests implications for group IV semiconductor nanowire electronics and optoelectronics.

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