The thermal evolution of large boron-interstitials clusters (BICs) in crystalline Si has been studied by transmission electron microscopy (TEM). After ion implantation (20keV and 1×1014Sicm2) and annealing (815°C and 5min), large clusters (68nm) have been observed in correspondence of a narrow, highly doped Si:B layer (2×1020Bcm3). Under prolonged annealing, such clusters dissolve, progressively shrinking their mean size below the TEM detection limit. The time evolution of such a BIC shrinking is fully compatible with the slow path dissolution kinetics recently published. These data suggest the identification of the slow dissolving BICs with the large observed clusters.

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