The thermal evolution of large boron-interstitials clusters (BICs) in crystalline Si has been studied by transmission electron microscopy (TEM). After ion implantation ( and ) and annealing ( and ), large clusters have been observed in correspondence of a narrow, highly doped Si:B layer . Under prolonged annealing, such clusters dissolve, progressively shrinking their mean size below the TEM detection limit. The time evolution of such a BIC shrinking is fully compatible with the slow path dissolution kinetics recently published. These data suggest the identification of the slow dissolving BICs with the large observed clusters.
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