We performed dopant mediated hole transport measurements to identify the depth position of individual boron acceptors and investigate two-acceptor coupling in silicon-on-insulator nanoscale field-effect transistors at a temperature of . The depth position is qualitatively obtained from the analysis of the acceptor-to-gate capacitances. We also observe signatures of a two-acceptor capacitive coupling in the characteristics of the conductance versus the front and back gate voltages.
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© 2007 American Institute of Physics.
2007
American Institute of Physics
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