Stable indium oxide thin-film transistors with fast threshold voltage recovery

Stable thin-film transistors (TFTs) with semiconducting indium oxide channel and silicon dioxide gate dielectric were fabricated by reactive ion beam assisted evaporation and plasma-enhanced chemical vapor deposition. The field-effect mobility is $3.3cm2∕Vs$⁠, along with an on/off current ratio of $106$⁠, and subthreshold slope of $0.5V$/decade. When subject to long-term gate bias stress, the TFTs show fast recovery of the threshold voltage $(VT)$ when relaxed without annealing, suggesting that charge trapping at the interface and/or in the bulk gate dielectric to be the dominant mechanism underlying $VT$ instability. Device performance and stability make indium oxide TFTs promising for display applications.