Realization of $n-Zn1−xMgxO∕i-ZnO∕SiOx∕n+-Si$ heterostructured $n-i-n$ light-emitting diodes by low-cost ultrasonic spray pyrolysis Available to Purchase

$n-Zn1−xMgxO∕i-ZnO∕SiOx∕n+-Si$ heterostructured light-emitting diodes have been demonstrated by low-cost ultrasonic spray pyrolysis. The current-voltage measurement shows typical characteristics of a back-to-back diode due to the double Schottky barriers induced by the $SiOx$ layer. Blue electroluminescence peaking at $460nm$ was observed at room temperature when a positive bias of $∼4V$ was applied on the Si substrate. The electroluminescence is suggested to be dominated by the donor-acceptor pair recombination in the $i-ZnO$ layer, where the holes were injected from the valence band of Si into the acceptor level of $i-ZnO$⁠.