Transport properties of field-effect transistor with Langmuir-Blodgett films of $C60$ dendrimer and estimation of impurity levels

Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of $C60$ dendrimer. The device showed $n$-channel normally off characteristics with the field-effect mobility of $2.7×10−3cm2V−1s−1$ at $300K$⁠, whose value is twice as high as that $(1.4×10−3cm2V−1s−1)$ for the FET with spin-coated films of $C60$ dendrimer. This originates from the formation of ordered $π$-conduction network of $C60$ moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around $300K$⁠. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.