Accumulated body ultranarrow channel silicon transistor with extreme threshold voltage tunability Available to Purchase

A side-gated ultranarrow channel (width $<10nm$⁠) silicon field effect transistor (FET) with extreme threshold voltage $(Vt)$ tunability is described. A narrow inversion layer is formed on the top interface controlled by the top gate. The device body and side interfaces are accumulated by up to $1019cm−3$ holes, drawn from the substrate by negatively biased side gates $(Vside)$⁠, increasing $Vt$ by $3V$⁠, suppressing peripheral leakage currents and short channel effects. $Vt$ response to $Vside$ follows a square root behavior, $dVt∕d−Vside=3.73V∕V$⁠, similar to that of body doping. Maximum linear tunability $(dVt∕dVside)$ exceeds $−2V∕V$⁠, average $dVt∕dVside$ is $−1.67V∕V$⁠.