The electrical and optical characteristics of high-gain, small-area heterojunction bipolar transistors (HBTs) grown by metal-organic chemical vapor deposition on sapphire substrate are reported. The common-emitter current-voltage characteristics of a emitter device demonstrates a current gain at and breakdown voltage, . The radiative recombination spectrum of a large area emitter HBT is measured, showing a peak at and a full width at half maximum of . A modulation input is applied to the HBT and both the optical and electrical outputs of a large area device is demonstrated.
Modulation of high current gain light-emitting heterojunction bipolar transistors
B. F. Chu-Kung, C. H. Wu, G. Walter, M. Feng, N. Holonyak, T. Chung, J.-H. Ryou, R. D. Dupuis; Modulation of high current gain light-emitting heterojunction bipolar transistors. Appl. Phys. Lett. 3 December 2007; 91 (23): 232114. https://doi.org/10.1063/1.2821380
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