Lifetimes of ortho-positronium in mesoporous silica films were measured before and after surface trimethylsilylation of –OH groups. Variations of positronium lifetimes in the mesopores upon the surface modification indicate that the interaction between positronium and the pore surface is weakened in the pores, whose surface is covered with groups, in comparison with those covered with –OH groups. This is consistent with the authors’ previous observation that positronium slowing down is less efficient in the pores covered with groups. The present work demonstrates that in the porosimetric application of positron annihilation lifetime spectroscopy, the interaction between positronium and the pore surface has to be properly taken into consideration.
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9 July 2007
Research Article|
July 10 2007
Positronium annihilation and pore surface chemistry in mesoporous silica films Available to Purchase
Chunqing He;
Chunqing He
a)
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
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Toshitaka Oka;
Toshitaka Oka
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
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Yoshinori Kobayashi;
Yoshinori Kobayashi
b)
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
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Nagayasu Oshima;
Nagayasu Oshima
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
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Toshiyuki Ohdaira;
Toshiyuki Ohdaira
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
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Atsushi Kinomura;
Atsushi Kinomura
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
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Ryoichi Suzuki
Ryoichi Suzuki
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Search for other works by this author on:
Chunqing He
a)
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Toshitaka Oka
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Yoshinori Kobayashi
b)
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Nagayasu Oshima
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Toshiyuki Ohdaira
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Atsushi Kinomura
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japan
Ryoichi Suzuki
National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8565 and 305-8568, Japana)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
Appl. Phys. Lett. 91, 024102 (2007)
Article history
Received:
May 11 2007
Accepted:
June 15 2007
Citation
Chunqing He, Toshitaka Oka, Yoshinori Kobayashi, Nagayasu Oshima, Toshiyuki Ohdaira, Atsushi Kinomura, Ryoichi Suzuki; Positronium annihilation and pore surface chemistry in mesoporous silica films. Appl. Phys. Lett. 9 July 2007; 91 (2): 024102. https://doi.org/10.1063/1.2756310
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