A detailed analysis of the band alignment between molecular beam deposited amorphous and GaAs is reported. The conduction band offset, measured by internal photoemission (IPE), is . The valence band offset (VBO) is probed by x-ray photoelectron spectroscopy (XPS). The accurate determination of the VBO requires a careful evaluation of differential charging phenomena and consequently a proper correction of the energy scale. The measured VBO value is . Since the gap is , as detected by photoconductivity analysis, the results obtained by IPE and XPS are in excellent agreement.
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XPS International LLC website (http://www.xpsdata.com/xpsdata.htm)
© 2007 American Institute of Physics.
2007
American Institute of Physics
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