Refractive index changes induced by ion beam implantation can be used to produce photonic devices such as waveguides. Here, we relate the measured three-dimensional changes in refractive index produced by ion beam implantation to modeling of the implantation process. We use a quantitative phase microscopic method in conjunction with a tomographic reconstruction process to determine the change in the refractive index distribution within a silica optical fiber that has been selectively implanted with 2.4MeVH+ ions. The index profile is compared with numerical simulations of the ion vacancy and ionization using the stopping range of ions in matter program.

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