Structural and electrical characteristics of a high-$k$ $NdTiO3$ gate dielectric

In this letter, we study the structural and electrical properties of high-$k$ neodymium titanium oxide $(NdTiO3)$ gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. We find that the capacitance value of $NdTiO3$ gate dielectric prepared at a $6nm$ Ti metal film is higher than other thicknesses and exhibits a lower hysteresis voltage and interface trap density in capacitance-voltage curves. This result is attributed to an amorphous $NdTiO3$ structure and the suppression of the interfacial layer observed from x-ray diffraction and x-ray photoelectron spectroscopy, respectively.