We present a study of the structural and optical properties of InAs quantum dots formed in a low density template of nanoholes fabricated by droplet epitaxy on GaAs (001). The growth conditions used here promote the formation of isolated quantum dots only inside the templated nanoholes. Due to the good optical quality and low density of these nanostructures, their ensemble and individual emission properties could be investigated and related to the particular growth method employed and the quantum dot morphology.
Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes
P. Alonso-González, B. Alén, D. Fuster, Y. González, L. González, J. Martínez-Pastor; Formation and optical characterization of single InAs quantum dots grown on GaAs nanoholes. Appl. Phys. Lett. 15 October 2007; 91 (16): 163104. https://doi.org/10.1063/1.2799736
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