We report that industrially qualified SbTe chalcogenide film can be applied to programmable metallization cell memory switching device. To fabricate the switching device, , Ag, and W (top electrode) were consequently sputtered on TiW (bottom electrode)/ substrate, and Ag diffusion process was not added. During Ag sputtering, it is apparent that Ag is diffused into film to form Ag-doped solid electrolyte, and that some of the diffused Ag reacts with Te to form Ag–Te bond in the solid electrolyte.
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.© 2007 American Institute of Physics.
2007
American Institute of Physics
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