Low-temperature formation of $SiO2$ layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process Available to Purchase

Silicon oxide $(SiO2)$ layers were fabricated at low temperatures $(⩽400°C)$ by combining the deposition of hydrogenated amorphous Si $(a-Si:H)$ with its oxidation using atmospheric pressure plasmas excited by a $150MHz$ very high-frequency (VHF) power. The surface excitation by the atmospheric pressure VHF plasma was capable of reducing the temperature for the hydrogen effusion from $a-Si:H$⁠. As a result, a porous $a-Si:H$ film containing a large amount of hydrogen could be transformed into a stoichiometric $SiO2$ with an approximately 24% increase in oxidation rate compared with the oxidation of Si(001) at a temperature of $400°C$⁠.