Band offsets between amorphous $LaAlO3$ and $In0.53Ga0.47As$

The band offsets between an amorphous $LaAlO3$ dielectric prepared by molecular-beam deposition and a $n$-type $In0.53Ga0.47As$ (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed $LaAlO3∕InGaAs$ interface are $3.1±0.1$ and $2.35±0.2eV$⁠, respectively. The band gap of $LaAlO3$⁠, as determined by Al $2p$ and O $1s$ core level energy loss spectra, is $6.2±0.1eV$⁠. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the $3.6nm$ thick amorphous $LaAlO3$⁠.