The carrier (electron and hole) capture cross section of defects at the SiO2Si interface is measured using trap-fill time in gigahertz charge-pumping experiment. The ability to use a highly asymmetric rectangular wave with very fast rise and fall times in our charge-pumping experiment greatly simplified data interpretation. Trap-fill times of less than or equal to 0.7ns are found for both electrons and holes. The corresponding capture cross section of 1015cm2 or larger for both electron and hole cannot be explained by the usual multiphonon emission mechanism. A modified cascade capture model involving the strained Si–Si bonds around the Pb center is proposed to explain the large capture cross sections.

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